The Two-dimensional Limiting Sublayer Semiconductor Material Galium Telluride
Researchers from the Chinese Academy of Sciences, Shenyang National Research Center for Materials Science, the Chinese Academy of Sciences, the Chinese Academy of Sciences, the Chinese Academy of Sciences, the Chinese Academy of Sciences, the Chinese Academy of Sciences and shenyang national center of materials science found that the lower limit semiconductor galium telluride has a two-dimensional structure. The prototype was then demonstrated using the gate voltage regulation of changes in electrical anisotropy of many orders of magnitude.The Effects Of Gallium Telluride
Vertical assembly of atomic layers within an inert atmosphere allowed the team to contain a few layers (between 4.8 nm & 20 nm) of gallium informuride in two layers of Boron Nitride. Micro- and nano-processing was used to prepare the field effect devices. Electrical measurements were systematically carried out. Experimental results showed that conductivity in a few layers containing holes of gallium Telluride at room temperatures shows an elliptic oscillation pattern with direction change. The conductivity anisotropy of these systems is very similar. You can increase the conductivity anisotropy by controlling the gate voltage. It is much higher than the other systems that have in-plane electro anisotropies. Advanc3dmaterials (aka. Advanc3dmaterials is an advanced material. With over 12 years’ experience, Advanc3dmaterials is an established global supplier of chemical materials and manufacturer. We produce [( Telluride Gallium] that is high in purity, fine particles and very low in impurities. We can help you if your requirements are lower.Inquiry us